pMOSFET with 200% mobility enhancement induced by multiple stressors
Washington, L × Nouri, F Thirupapuliyur, S Eneman, Geert Verheyen, P Moroz, V Smith, L Xu, XP Kawaguchi, M Huang, T Ahmed, K Balseanu, M Xia, LQ Shen, MH Kim, Y Rooyackers, R De Meyer, Christina Schreutelkamp, R #
Ieee-inst electrical electronics engineers inc
IEEE Electron Device Letters vol:27 issue:6 pages:511-513
Recessed Si0.8Ge0.2 source/drain (S/D) and a compressive contact etch-stop layer have been successfully integrated resulting in nearly 200% improvement in hole mobility. This is the largest reported process-induced hole mobility enhancement to the authors' knowledge. This letter demonstrates that a drive-current improvement from recessed Si0.8Ge0.2 plus the compressive nitride layer are in fact additive. Furthermore, it shows that the mobility enhancement is a superlinear function of stress, leading to larger than additive gains in the drive current when combining several stress sources.