ITEM METADATA RECORD
Title: pMOSFET with 200% mobility enhancement induced by multiple stressors
Authors: Washington, L ×
Nouri, F
Thirupapuliyur, S
Eneman, Geert
Verheyen, P
Moroz, V
Smith, L
Xu, XP
Kawaguchi, M
Huang, T
Ahmed, K
Balseanu, M
Xia, LQ
Shen, MH
Kim, Y
Rooyackers, R
De Meyer, Christina
Schreutelkamp, R #
Issue Date: Jun-2006
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Electron Device Letters vol:27 issue:6 pages:511-513
Abstract: Recessed Si0.8Ge0.2 source/drain (S/D) and a compressive contact etch-stop layer have been successfully integrated resulting in nearly 200% improvement in hole mobility. This is the largest reported process-induced hole mobility enhancement to the authors' knowledge. This letter demonstrates that a drive-current improvement from recessed Si0.8Ge0.2 plus the compressive nitride layer are in fact additive. Furthermore, it shows that the mobility enhancement is a superlinear function of stress, leading to larger than additive gains in the drive current when combining several stress sources.
URI: 
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science