Title: Hole trapping during low gate bias, high drain bias hot-carrier injection in n-mosfets at 77-k
Authors: Heremans, Paul ×
Groeseneken, Guido
Maes, He #
Issue Date: Apr-1992
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on electron devices vol:39 issue:4 pages:851-857
Abstract: Injection and trapping of holes in the gate oxide of n-channel MOS transistors during operation at large drain and small gate biases are investigated at liquid-nitrogen temperature. Experimental evidence is given that about three times less trapping of holes occurs in the gate oxide at 77 K as compared to 295 K. We show that this is due to the small hole mobility in SiO2 at low temperatures.
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science