Title: Enhancement of diffusion length of pregettered multicrystalline silicon solar-cells by hydrogen-ion implantation at the end of the process
Authors: Sivoththaman, S ×
Rodot, M
Muller, Jc
Hartiti, B
Ghannam, M
Elgamel, He
Nijs, Johan
Sarti, D #
Issue Date: Jun-1993
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:62 issue:24 pages:3172-3173
Abstract: 2 X 2 cm2 n+pp+ multicrystalline silicon solar cells have been fabricated using thin wafers less than 200 mum thick. A large electron diffusion length has been achieved in these wafers after metallic impurity gettering using a heavy phosphorus diffusion prior to cell processing. Further improvements in the electron diffusion length (L(n)) and in the short circuit current (J(sc)) of these cells are brought out by hydrogen ion implantation carried out through the back surface of the finished cell. A 25% increase in L(n) and a 5.5% increase in J(sc) are obtained.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - ELECTA, Electrical Energy Computer Architectures
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science