Title: Impurity incorporation during copper electrodeposition in the curvature-enhanced accelerator coverage regime
Authors: Zhang, Wenqi ×
Brongersma, SH
Conard, T
Wu, W
Van Hove, M
Vandervorst, Wilfried
Maex, Karen #
Issue Date: 2005
Publisher: Electrochemical soc inc
Series Title: Electrochemical and Solid-State Letters vol:8 issue:7 pages:C95-C97
Abstract: Copper electrodeposition in fine recesses requires the use of several additives to induce a strongly accelerated deposition rate inside recesses. This leads to so-called bottom-up filling for fine recesses, induced by curvature-enhanced accelerator coverage. Here we show that more of the additives are incorporated in the deposit when this mechanism is active by studying the impurity concentrations with time-of-flight scanning ion mass spectroscopy in specially prepared samples with a high density of recesses. The undesired higher copper resistivity for small dimensions, induced by this incorporation, results in a reduction of the expected surface-scattering induced deviation from Matthiessen's rule. (c) 2005 The Electrochemical Society.
ISSN: 1099-0062
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Nuclear and Radiation Physics Section
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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