Title: STI/LOCOS compatible LDMOS structure in standard CMOS
Authors: Ramos, J ×
Steyaert, Michel #
Issue Date: Sep-2003
Publisher: Iee-inst elec eng
Series Title: Electronics Letters vol:39 issue:19 pages:1417-1419
Abstract: A novel high-voltage transistor structure compatible with shallow trench isolation and local oxidation of silicon is described. This device, which can be implemented in a standard CMOS process, is capable of handling high voltages without destruction. A duplication of the breakdown voltage was measured.
ISSN: 0013-5194
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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