Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation
Stuer, C Steegen, A Van Landuyt, J Bender, H Maex, Karen #
Iop publishing ltd
Microscopy of semiconducting materials 2001 issue:169 pages:481-484
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.