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Title: Germanium MOSFETs with CeO2/HfO2/TiN gate stacks
Authors: Nicholas, Gareth ×
Brunco, David P
Dimoulas, A
Van Steenbergen, Jan
Bellenger, Florence
Houssa, Michel
Caymax, Matty
Meuris, Marc
Panayiotatos, Y
Sotiropoulos, Andreas #
Issue Date: Jun-2007
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Transactions on Electron Devices vol:54 issue:6 pages:1425-1430
Abstract: Long-channel Ge pMOSFETs and nMOSFETs were fabricated with high-kappa CeO2/HfO2/TiN gate stacks. CeO2 was found to provide effective passivation of the Ge surface, with low diode surface leakage currents. The pMOSFETs showed a large I-ON/I-OFF ratio of 10(6), a subthreshold slope of 107 mV/dec, and a peak mobility of approximately 90 cm(2)/V . s at 0.25 MV/cm. The nMOSFET performance was compromised by poor junction formation and demonstrated a peak mobility of only similar to 3 cm(2)/V . s but did show an encouraging I-ON/I-OFF ratio of 10(5) and a subthreshold slope of 85 mV/dec.
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Semiconductor Physics Section
× corresponding author
# (joint) last author

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