Technological aspects of epitaxial cosi2, layers for cmos
Lauwers, A × Schreutelkamp, Rj Brijs, B Bender, H Maex, Karen #
Elsevier science bv
Applied surface science vol:73 pages:19-24
The use of consecutively sputtered Ti/Co layers for the silicidation of Si implanted with 2 X 10(15) As or B/cm(2) and for the silicidation of polycrystalline Si has been investigated. It has been observed that the silicidation reaction is slowed down by the presence of the Ti layer, which acts as a diffusion barrier.