Title: Technological aspects of epitaxial cosi2, layers for cmos
Authors: Lauwers, A ×
Schreutelkamp, Rj
Brijs, B
Bender, H
Maex, Karen #
Issue Date: Nov-1993
Publisher: Elsevier science bv
Series Title: Applied surface science vol:73 pages:19-24
Abstract: The use of consecutively sputtered Ti/Co layers for the silicidation of Si implanted with 2 X 10(15) As or B/cm(2) and for the silicidation of polycrystalline Si has been investigated. It has been observed that the silicidation reaction is slowed down by the presence of the Ti layer, which acts as a diffusion barrier.
ISSN: 0169-4332
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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