Title: Influence of temperature on the properties of sputtered alsicu films
Authors: Debosscher, W ×
Matilainen, M
Witvrouw, Ann
Maex, Karen #
Issue Date: Nov-1993
Publisher: Elsevier science bv
Series Title: Applied surface science vol:73 pages:295-304
Abstract: Since aluminum is the most widely used material for IC metallization, a good understanding of its properties under varying conditions is a necessity. This article discusses the properties of AlSi(1%)Cu(0.5%) layers sputtered in a cluster tool at different substrate temperatures, ranging from 100 to 500 degrees C. In addition to standard analysis techniques to determine stress and grain size, a new optical technique for measuring haze and light point defects of AlSiCu thin films is introduced. The correlation between the different techniques is examined and the additional information obtainable from haze measurements is evaluated. In the following experiment, all wafers received a post anneal treatment at 400 or 500 degrees C. The changes in the layer properties and the quality and quantity of hillocks are presented.
ISSN: 0169-4332
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Production Engineering, Machine Design and Automation (PMA) Section
× corresponding author
# (joint) last author

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