Tem study of ultrathin buried cobalt silicide layers formed by ion-beam synthesis
Vanhellemont, J × Maex, Karen Wu, Mf Romanorodriguez, A #
Iop publishing ltd
Institute of physics conference series issue:117 pages:311-314
Results are presented of a TEM study of thin buried cobalt silicide layers formed by low energy, low dose cobalt ion implantation. Buried layer formation has been been studied both in (111) and (001) oriented substrates. Special attention is given to the CoSi2/Si interface quality, defect generation in the silicon substrate and pinhole formation in the ultrathin buried silicide layers.