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Title: Impact of a high electric field on the extraction of the generation lifetime from the reverse generation current component of shallow n(+)-p-well diodes
Authors: Poyai, A ×
Simoen, E
Claeys, Corneel #
Issue Date: Oct-2001
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on electron devices vol:48 issue:10 pages:2445-2446
Abstract: A procedure is proposed to extract the thermal generation lifetime (tau (g)) profile in the depletion region of shallow n(+)-p-well junctions surrounded by shallow trench isolation from the generation current density. This is achieved by taking account of the electric field enhancement factor. As will be shown, a more realistic tau (g) profile is obtained that better reflects the trap density profile, corresponding with the deep boron ion implantation-related extended defects.
URI: 
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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