IEEE Transactions on electron devices vol:39 issue:10 pages:2278-2283
The general current-voltage characteristics of p-channel transistors on high-resistivity silicon (HR-Si) have been described in Part I . In this paper, the noise performance, important for use of these devices in analog applications, is investigated. This is done for its two operation modes: bulk (\V(gs)\ < \V(T)\) and surface (\V(gs)\ > \V(T)\). For the studied transistors, both modes are characterized by a 1/f noise spectrum extending to frequencies up to almost-equal-to 100 Hz, and followed by a white-noise spectrum, determined by the substrate resistance.