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Title: Short-channel pmosts in a high-resistivity silicon substrate .2. noise performance
Authors: Vanstraelen, G ×
Simoen, E
Claeys, Cor
Declerck, Gj #
Issue Date: Oct-1992
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on electron devices vol:39 issue:10 pages:2278-2283
Abstract: The general current-voltage characteristics of p-channel transistors on high-resistivity silicon (HR-Si) have been described in Part I [1]. In this paper, the noise performance, important for use of these devices in analog applications, is investigated. This is done for its two operation modes: bulk (\V(gs)\ < \V(T)\) and surface (\V(gs)\ > \V(T)\). For the studied transistors, both modes are characterized by a 1/f noise spectrum extending to frequencies up to almost-equal-to 100 Hz, and followed by a white-noise spectrum, determined by the substrate resistance.
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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