Title: Nanoscale electrical characterization of HfO2/SiO2/MOS gate stackx with enhanced-CAFM
Authors: Nafria, M ×
Blasco, X
Porti, M
Aguilera, L
Aymerich, X
Petry, Jasmine
Vandervorst, Wilfried #
Issue Date: 2005
Publisher: IEEE
Host Document: pages:65-68
Conference: Spanish Conference on Electron Devices location:Bellaterra Spain date:02/02/05
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Electrical Engineering - miscellaneous
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science