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Title: Electrical and material evaluation of the MOCVD TiN as metal gate electrode for advanced CMOS technology
Authors: Singanamalla, Raghunath ×
Lisoni, Judit
Ferain, Isabelle
Richard, Olivier
Carbonell, Laure
Schram, Tom
Yu, HongYu
Kubicek, Stefan
De Gendt, Stefan
Jurczak, Malgorzata
De Meyer, Christina #
Issue Date: May-2006
Host Document: pages:0917-E12-02
Conference: Gate Stack Scaling - Materials Selection, Role of Interfaces, and Reliability Implications location:Leuven Belgium date:17/04/06
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Electrical Engineering - miscellaneous
Molecular Design and Synthesis
× corresponding author
# (joint) last author

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