This item still needs to be validated !
|ITEM METADATA RECORD
|Title: ||Electrical and material evaluation of the MOCVD TiN as metal gate electrode for advanced CMOS technology|
|Authors: ||Singanamalla, Raghunath ×|
De Gendt, Stefan
De Meyer, Christina #
|Issue Date: ||May-2006 |
|Host Document: ||pages:0917-E12-02|
|Conference: ||Gate Stack Scaling - Materials Selection, Role of Interfaces, and Reliability Implications location:Leuven Belgium date:17/04/06|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Electrical Engineering - miscellaneous|
Molecular Design and Synthesis
× corresponding author|
# (joint) last author|
|Files in This Item:
There are no files associated with this item.
Request a copy
All items in Lirias are protected by copyright, with all rights reserved.