Title: Which defect breaks down gate oxides?
Authors: Zhang, W.D
Zhang, J.F
Zhao, C.Z
Groeseneken, Guido
Degraeve, Robin
Issue Date: 2003
Conference: Semiconductor Interface Specialists Conference (SISC) location:Liverpool date:04/12/03
Publication status: published
KU Leuven publication type: DI
Appears in Collections:Electrical Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors

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