Title: Effect of hafnium germanate on the interface of HfO2/germanium metal oxide semiconductor devices
Authors: Van Elshocht, Sven ×
Caymax, Matty
Conard, Thierry
De Gendt, Stefan
Hoflijk, Ilse
Houssa, Michel
De Jaeger, Brice
Van Steenbergen, Jan
Heyns, Marc
Meuris, Marc #
Issue Date: Apr-2006
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:88 issue:14 pages:1-3
Article number: 141904
Abstract: We have studied the thermal stability of HfO2 thin layers on germanium and the substrate interface development. HfO2 was deposited on Ge substrates and annealed in O-2 or N-2 at 500 degrees C (substrate temperature). After O-2 anneal, we observed the formation of hafnium germanate, which is stable at 500 degrees C in N-2 as opposed to GeO2 that desorbs as GeO. We believe that this hafnium germanate is an oxygen barrier and as such is at the origin of the much thinner interface between HfO2 and germanium as compared to silicon. In addition, results suggest that the HfGeOx is related to the high interface state density frequently reported for germanium metal oxide semiconductor devices.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
Semiconductor Physics Section
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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