Title: A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography
Authors: Nackaerts, Axel ×
Ercken, Monique
Demuynck, Steven
Lauwers, Anne
Baerts, Christina
Bender, Hugo
Boullart, Werner
Collaert, Nadine
Degroote, Bart
Delvaux, Christie
de Marneffe, Jean-Francois
Dixit, Abhisek
De Meyer, Christina
Hendrickx, Eric
Heylen, Nancy
Jaenen, Patrick
Laidler, David
Locorotondo, Sabrina
Maenhoudt, Mireille
Moelants, Myriam
Pollentier, Ivan
Ronse, Kurt
Rooyackers, Rita
Van Aelst, Joke
Vandenberghe, Geert
Vandervorst, Wilfried
Vandeweyer, Tom
Vanhaelemeersch, Serge
Van Hove, Marleen
Van Olmen, Jan
Verhaegen, Staf
Versluijs, Janko
Vrancken, Christa
Wiaux, Vincent
Jurczak, Malgorzata
Biesemans, Serge #
Issue Date: Dec-2004
Publisher: IEEE
Host Document: pages:269-272
Conference: Technical Digest International Electron Devices Meeting - IEDM location:Leuven Belgium date:13/12/04
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Electrical Engineering - miscellaneous
× corresponding author
# (joint) last author

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