Author:

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, OXIDE-SEMICONDUCTOR TRANSISTORS, KINK, HYSTERESIS, 4.2-K, BEHAVIOR, MOSFETS, NMOSTS, MODEL, 0204 Condensed Matter Physics, 0205 Optical Physics, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware, 5104 Condensed matter physics

Abstract:

In this paper, the use of a body tie in partially depleted SOI MOSTs operating at 4.2 K is critically discussed. It is shown that there is a considerable improvement in the threshold voltage metastability and the related hysteresis and transient behavior of the drain current. However, the typical floating body effects, like the kink and the parasitic bipolar action are hardly suppressed. This is mainly due to the high series resistance of the body contact, similar as in bulk MOSTs operated at liquid helium temperatures. © 1994.