|ITEM METADATA RECORD
|Title: ||Direct observation of 2-D dopant profiles of MOSFETs activated by millisecond anneal|
|Authors: ||Adachi, K ×|
Ishiuchi, H #
|Issue Date: ||2006 |
|Host Document: ||pages:104-107|
|Conference: ||International Workshop on Junction Technology - IWJT location:Japan date:15/05/06|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Electrical Engineering - miscellaneous|
× corresponding author|
# (joint) last author|
|Files in This Item:
There are no files associated with this item.
Request a copy
All items in Lirias are protected by copyright, with all rights reserved.