Doping Engineering for Device Fabrication, Date: 2006/04/18 - 2006/04/19, Location: Leuven Belgium
DOPING ENGINEERING FOR DEVICE FABRICATION
Author:
Keywords:
Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science, Characterization & Testing, Materials Science
Abstract:
The advantages of fluorine co-implantation on reducing the deep P junction profile is investigated and commented as a possible valuable solution for further scaling of the NMOS transistors spacer length. On PMOS transistors, Ge+C+B cocktail junctions lead to improved short channel effects control, S/D resistance and performance over the conventional approaches. Additional laser annealing induces a partial dissolution of the doping clusters in the junction and lower the S/D transistors resistance. A performance improvement is demonstrated both for NMOS and PMOS with cocktail junctions activated by spike RTA and additional laser annealing. © 2006 Materials Research Society.