|ITEM METADATA RECORD
|Title: ||AlGaN/GaN HEMTs: removal of the sapphire substrate using laser lift-off|
|Authors: ||Das, Johan|
Borghs, Gustaaf #
|Issue Date: ||2004 |
|Host Document: ||International Conference on Nitride Semiconductors 2004|
|Conference: ||International Workshop on Nitride Semiconductors location:Pittsburgh, Pennsylvania, USA date:19-23/07/04|
|Publication status: ||published|
|KU Leuven publication type: ||IMa|
|Appears in Collections:||Applied Mechanics and Energy Conversion Section|
Physics and Astronomy - miscellaneous
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