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|ITEM METADATA RECORD
|Title: ||A finite element study of process induced stress in the transistor channel: effects of silicide contact and gate stack|
|Authors: ||Torregiani, Cristina ×|
Van Dal, Mark
Maex, Karen #
|Issue Date: ||2004 |
|Conference: ||EuroSimE: 5th Int. Conf. on Thermal & Mechanical Simulation and Experiments in Micro-Electronics and Micro-Systems location:Brussels Belgium date:09/05/04|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Electrical Engineering - miscellaneous|
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author|
# (joint) last author|
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