International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Publication date:
1999-01-01
Pages:
31 -
34
Author:
Van Meer, Hans
Lyu, Jeong-Ho ; Kubicek, Stefan ; De Meyer, Kristin
Abstract:
For the first time, experimental results are presented on the Reverse Narrow-Channel Effect (RNCE) in SOI and bulk MOSFETs using indium as a channel dopant. The presented results show that devices with an indium channel exhibit the same RNCE as devices with a boron channel, which refers to the same diffusion mechanisms in deep submicron devices.