Advanced Metallization Conference (AMC), Date: 2000/10/03 - 2000/10/05, Location: San Diego, CA, USA

Publication date: 2000-01-01
Pages: 287 - 293
ISSN: 1-55899-574-9
Publisher: MATERIALS RESEARCH SOCIETY

Advanced Metallization Conference 2000 (AMC 2000)

Author:

Iacopi, Francesca
Donaton, R ; Coenegrachts, Bart ; Komiya, Takayuki ; Struyf, Herbert ; Lepage, Muriel ; Van Aelst, Joke ; Boullart, Werner ; De Roest, David ; Vis, I ; Baklanov, Mikhaïl ; Vereecke, Guy ; Van Hove, Marleen ; Stucchi, Michele ; Tokei, Zsolt ; Meynen, Herman ; Bremmer, JN ; Vanhaelemeersch, Serge ; Maex, Karen ; Edelstein, D ; Dixit, G ; Yasuda, Y ; Ohba, T

Keywords:

Science & Technology, Physical Sciences, Technology, Electrochemistry, Metallurgy & Metallurgical Engineering, Materials Science, Coatings & Films, Physics, Condensed Matter, Materials Science, Physics, SILSESQUIOXANE

Abstract:

This paper presents firstly an overview on XLK thin film preparation and film properties that are relevant for its integration as an ultra-low-κ Inter-Layer-Dielectric for copper damascene processes. Subsequently, results coming from integration of XLK in a single damascene process are shown, indicating feasibility and stability of the process. Comparisons between measured and simulated inter-line capacitance values show a κ of about 2.0 for the integrated XLK films. Feasibility studies on the way towards dual damascene integration of the ultra-low-κ focus on the wet post-dry etch clean, and demonstrate the chemical and physical compatibility of XLK with a dip treatment into Microstrip™ MS6020, a water-based solution meant for copper polymer removal.