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Title: Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line
Authors: De Jaeger, Brice ×
Houssa, Michel
Satta, Alessandra
Kubicek, Stefan
Verheyen, Peter
Van Steenbergen, Jan
Croon, Jeroen
Kaczer, Ben
Van Elshocht, Sven
Delabie, Annelies
Kunnen, Eddy
Sleeckx, Erik
Teerlinck, Ivo
Lindsay, Richard
Schram, Tom
Chiarella, Thomas
Degraeve, Robin
Conard, Thierry
Poortmans, Jef
Winderickx, Gillis
Boullart, Werner
Schaekers, Marc
Mertens, Paul
Caymax, Matty
Vandervorst, Wilfried
Van Moorhem, Els
Biesemans, Serge
De Meyer, Christina
Ragnarsson, Lars-Ake
Lee, S
Kota, G
Raskin, G
Mijlemans, P
Autran, J.L
Afanas'ev, Valeri
Stesmans, Andre
Meuris, Marc
Heyns, Marc #
Issue Date: 2004
Publisher: IEEE
Host Document: pages:189-192
Conference: Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC location:Leuven Belgium date:21/09/04
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Electrical Engineering - miscellaneous
Clinical Residents Medicine
Semiconductor Physics Section
Surface and Interface Engineered Materials
× corresponding author
# (joint) last author

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