|ITEM METADATA RECORD
|Title: ||Depth profiling of B through silicide on silicon structures, using SIMS and resonant post-ionisation SIMS|
|Authors: ||De Bisschop, Peter ×|
Vandervorst, Wilfried #
|Issue Date: ||1995 |
|Host Document: ||pages:22/01/07|
|Conference: ||Proceedings of the 3rd International Workshop on the Measurement and Characterizaton of Ultra-Shallow Dopant Profiles in Semicon location:Leuven Belgium|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Electrical Engineering - miscellaneous|
× corresponding author|
# (joint) last author|
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