IEEE Transactions on Electron Devices
Publication date:
2021-02-01
Volume:
68
Pages:
645 -
652
Publisher:
Institute of Electrical and Electronics Engineers
Author:
Cingu, Deepthi
Li, Xiangdong ; Bakeroot, Benoit ; Amirifar, Nooshin ; Geens, Karen ; Jacobs, Kristof JP ; Zhao, Ming ; You, Shuzhen ; Groeseneken, Guido ; Decoutere, Stefaan
Keywords:
Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics, p-GaN gate high electron mobility transistor (HEMT), reliability, reverse conduction, synchronous conversion, DYNAMIC R-ON, V-TH, SUPPRESSION, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware