GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and < /i>V< //i>< /sub>T< //sub> instability effect

You, Shuzhen; Li, Xiangdong; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan

doi:10.1088/1361-6641/abdbc1

GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and < /i>V< //i>< /sub>T< //sub> instability effect

Author:

You, Shuzhen

Li, Xiangdong ; Geens, Karen ; Posthuma, Niels ; Zhao, Ming ; Liang, Hu ; Groeseneken, Guido ; Decoutere, Stefaan

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Condensed Matter, Engineering, Materials Science, Physics, p-GaN gate HEMTs, MVSG compact model, GaN ICs, V-T instability, gate leakage, HEMTS, TRANSISTORS, 0204 Condensed Matter Physics, 0906 Electrical and Electronic Engineering, 0912 Materials Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware, 5104 Condensed matter physics