This item still needs to be validated !
Title: Comparison of the radiation behavior of 65 nm fully depleted Silicon-on-Insulator MOSFETs employing different tensile-strain-inducing techniques
Authors: Put, Sofie ×
Simoen, Eddy
Augendre, Emmanuel
Claeys, Corneel
Van Uffelen, M
Leroux, Paul #
Issue Date: 2006
Publisher: IEEE
Conference: Radiation Effects on Components and Systems Workshop - RADECS location:Leuven Belgium date:27/09/06
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
ESAT - MICAS, Microelectronics and Sensors
Technologiecluster ESAT Elektrotechnische Engineering
Electrical Engineering (ESAT) TC, Technology Campus Geel
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.