Title: Electrical properties of atomic-beam deposited GeO1-xNx/HfO2 gate stacks on Ge
Authors: Houssa, Michel ×
Conard, Thierry
Bellenger, Florence
Mavrou, G.
Panayiotatos, Y.
Sotiropoulos, A.
Dimoulas, A.
Meuris, Marc
Caymax, Matty
Heyns, Marc #
Issue Date: 2006
Publisher: Electrochemical Society
Series Title: Journal of the Electrochemical Society vol:153 issue:12 pages:G1112-G1116
ISSN: 0013-4651
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
Semiconductor Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science