|ITEM METADATA RECORD
|Title: ||TSUPREM4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions|
|Authors: ||Sibaja-Hernandez, Arturo ×|
Maes, Herman #
|Issue Date: ||2004 |
|Series Title: ||Materials Science in Semiconductor processing vol:8 issue:1 pages:115-120|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||Associated Section of ESAT - INSYS, Integrated Systems|
× corresponding author|
# (joint) last author|
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