|ITEM METADATA RECORD
|Title: ||Low-frequency noise behavior of SiO2-HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness|
|Authors: ||Simoen, Eddy ×|
Young, E #
|Issue Date: ||2004 |
|Series Title: ||IEEE Transactions on Electron Devices vol:51 issue:5 pages:780-784|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||Associated Section of ESAT - INSYS, Integrated Systems|
× corresponding author|
# (joint) last author|
|Files in This Item:
There are no files associated with this item.
Request a copy
All items in Lirias are protected by copyright, with all rights reserved.
© Web of science