ITEM METADATA RECORD
Title: Low-frequency noise behavior of SiO2-HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness
Authors: Simoen, Eddy ×
Mercha, Abdelkarim
Pantisano, Luigi
Claeys, Corneel
Young, E #
Issue Date: 2004
Series Title: IEEE Transactions on Electron Devices vol:51 issue:5 pages:780-784
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science