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Title: A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300K
Authors: Nicolett, A. S ×
Martino, Joao Antonio
Simoen, Eddy
Claeys, Cor #
Issue Date: 2000
Host Document: pages:D45-1-D45/5
Conference: Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems;
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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