Title: Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation
Authors: Hayama, K ×
Takakura, K
Shigaki, K
Ohyama, H
Rafi, J.M
Mercha, Abdelkarim
Simoen, Eddy
Claeys, Corneel #
Issue Date: 2006
Series Title: Microelectronics Reliability vol:46 issue:09/11/07 pages:1731-1735
ISSN: 0026-2714
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science