Adanced Metallization Conference 2004, Date: 2004/10/19 - 2004/10/21, Location: San Diego, CA, USA

Publication date: 2005-01-01
Pages: 801 - 805
ISSN: 1-55899-814-4
Publisher: MRS

ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004)

Author:

Tokei, Zsolt
Gailledrat, Thomas ; Li, Yunlong ; Schuhmacher, Jorg ; Mandrekar, T ; Guggilla, S ; Mebarki, Bencherki ; Maex, Karen ; Erb, D ; Ramm, P ; Masu, K ; Osaki, A

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Metallurgy & Metallurgical Engineering, Engineering, Materials Science, LAYER

Abstract:

RC-delay performance and barrier reliability of an ALD TaN + PVD flash barrier was compared to PVD only barriers. The integration of an ALD TaN + PVD flash barrier results in lower leakage current than PVD schemes both at room temperature and at elevated temperature. Time Dependent Dielectric Breakdown experiments showed that an ALD + PVD flash barrier integrated with an SiOC:H low-k material leads to an interconnect lifetime above 10 years. © 2005 Materials Research Society.