39th Annual International Reliability Physics Symposium; 30 April - 3 May 2001; Orlando, FL, USA., Date: 2001/04/30 - 2001/05/03, Location: Leuven Belgium
39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001
Author:
Keywords:
Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics, DMOS, ESD, reliability, smart power, base push out, TCAD
Abstract:
The physical mechanisms that influence the triggering and holding voltage in a DMOS transistor on smart power technology are investigated. We demonstrate that a high and a low holding voltage device can be designed by changing the lateral bipolar base distance and that also the trigger voltage can be easily tuned. The layout variation that controls the holding voltage also leads to a different snapback mechanism and a different current flow through the device. Excellent ESD capabilities of 16-20mA/μm width have been achieved.