Nuclear Instruments and Methods in Physics Research A vol:A439 pages:310-318
In this paper, the correlation between the microscopic damage parameters and the macroscopic device performance degradation is investigated for 10 MeV proton-irradiated Float-Zone (FZ) silicon diodes, with n- and p-type doping density in the 10(14) cm(-3) range. It is shown that the radiation-induced deep-level concentrations, obtained from deep-level transient spectroscopy show a proportional increase with the proton fluence, for the dominant traps and this both in n- and p-type substrates. The same applies for the increase in the reverse diode current and the reduction of the inverse carrier recombination lifetime. The obtained spectroscopic information is substituted in the Shockley-Read-Hall model for the diode reverse current and recombination Lifetime. From the comparison between calculated and measured parameters, It is concluded that in proton-irradiated diodes fabricated in FZ p- and n-type substrates, the divacancy related deep-level centres at E-c - 0.42 eV play a dominant role in both the generation and the recombination lifetime. (C) 2000 Elsevier Science B.V. All rights reserved.