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2020 IEEE International Electron Devices Meeting (IEDM), Date: 2020/12/12 - 2020/12/18, Location: San Francisco, CA, USA

Publication date: 2020-01-01
ISSN: 978-1-7281-8888-1
Publisher: IEEE

2020 IEEE International Electron Devices Meeting (IEDM)

Author:

Santermans, Sybren
Barge, David ; Hellings, Geert ; Mori, Carlos Bergveld ; Migacz, Konrad Joseph ; Rip, Jens ; Spampinato, Valentina ; Vos, Rita ; Du Bois, Bert ; Chaudhuri, Ashesh Ray ; Martino, João Antonio ; Heyns, Marc ; Severi, Simone ; Van Roy, Willem ; Martens, Koen

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering

Abstract:

We report on the smallest silicon FinFETs functioning as biosensors with 13 nm wide fins and 50 nm gate lengths. These electrolytically gated finFETs exhibit a near-ideal subthreshold swing (~65 mV/dec) and a median voltage referred 1/f noise of only ~470 μV 2 μm 2 /Hz (at 1Hz, at threshold). Binding biomolecules to the chemically modified gate dielectric surface changes the threshold voltage VT. DNA-PNA hybridization shows a statistically significant signal across all device geometries (50 nm - 10 μm gate length) with a median VT shift of 36 mV for a hybridized 15 base DNA surface density of ~8×10 12 cm -2 . We obtain a clear signal of 17 mV for a 20 base DNA surface density of ~8×10 11 cm -2 , which amounts to tens of molecules for a 13 nm wide and 90 nm long device. This is a major improvement compared to our previously reported 250 nm long FETs which picked up ~800 molecules and a significant step forward towards the realization of single molecule sensing with fully integrated silicon FETs. Finally, based on experiment and simulation, we predict single-molecule detection with SNR > 5 to be possible with sub-70 nm finFETs.