Title: On the behaviour of the divacancy in silicon during anneals between 150 and 350 C
Authors: Trauwaert, Marie-Astrid ×
Vanhellemont, Jan
Maes, Herman
Van Bavel, Mieke
Langouche, Guido
Stesmans, André
Clauws, P #
Issue Date: 1995
Host Document: pages:1147-1152
Conference: ICDS-18. Proceedings 18th International Conference on Defects in Semiconductors - ; July 23 -28, 1995; Sendai, Japan. location:Leuven Belgium
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Nuclear and Radiation Physics Section
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.