Analytical model for failure rate prediction due to anomalous charge loss of Flash memories

Degraeve, Robin; Schuler, Franz; Lorenzini, Martino; Wellekens, Dirk; Hendrickx, Paul; Van Houdt, Jan; Haspeslagh, Luc; Groeseneken, Guido; Tempel, Georg

doi:10.1109/IEDM.2001.979607

Analytical model for failure rate prediction due to anomalous charge loss of Flash memories

Author:

Degraeve, Robin

Schuler, Franz ; Lorenzini, Martino ; Wellekens, Dirk ; Hendrickx, Paul ; Van Houdt, Jan ; Haspeslagh, Luc ; Groeseneken, Guido ; Tempel, Georg

Abstract:

Anomalous charge loss in flash memories is modeled with a percolation concept. An analytical model is constructed that relates the charge loss distribution of moving bits in flash memories with the geometric distribution of oxide traps, thus linking the phenomenological description of moving bits to physical conduction models. This model allows flash memory failure rate predictions for different oxide qualities and thicknesses.