Title: Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling
Authors: Houssa, Michel ×
Aoulaiche, Marc
De Gendt, Stefan
Groeseneken, Guido
Heyns, Marc #
Issue Date: Jun-2007
Publisher: Pergamon-elsevier science ltd
Series Title: Microelectronics Reliability vol:47 issue:6 pages:880-889
Abstract: Negative bias temperature instabilities (NBTI) in SiOx(N)/HfSiO(N)/TaN based pMOSFETs are investigated. It is shown that nitrogen-incorporation in the gate stack (either by NH3 anneals or decoupled plasma nitridation, DPN) result in much enhanced NBTI-Device degradation is mainly due to fast (interface) state generation in the non-nitrided stacks, while a substantial contribution of the defects produced in the nitrided stacks are slow (bulk) states. The kinetics of fast interface states is modeled within a reaction-dispersive transport model, taking into account the dispersive transport of protons generated from the depassivation of trivalent Si dangling bonds at the Si/SiOx interace (P-b0 centers). The generation of slow states in the nitrided stacks is simulated by an electrochemical model, considering the electric field and hole assisted breaking of nitrogen-related defects, tentatively attributed to Si2N center dot or Hf2N center dot dangling bonds. A correlation between NBTI and recovery is also found, namely that enhanced NBTl in nitrided stacks results in enhanced recovery. This suggests that recovery mainly arises from the detrapping of holes at the N-related defects. (c) 2006 Elsevier Ltd. All rights reserved.
ISSN: 0026-2714
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Semiconductor Physics Section
Molecular Design and Synthesis
Department of Materials Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

Files in This Item:
File Status SizeFormat
pub04517.pdf Published 1107KbAdobe PDFView/Open Request a copy

These files are only available to some KU Leuven Association staff members


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science