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Title: High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation
Authors: Germain, Marianne
Derluyn, Joff
Xiao, Dongping
Vandersmissen, Raf
Das, Johan
Wang, Wenfei
Boeykens, Steven
Leys, Maarten
Degroote, Stefan
Ruythooren, Wouter
Borghs, Gustaaf #
Issue Date: 2004
Conference: MRS Fall Meeting Symposium E: GaN, AlN, InN, and Their Alloys location:Leuven Belgium date:29/11/04
Publication status: published
KU Leuven publication type: IMa
Appears in Collections:Physics and Astronomy - miscellaneous
Electrical Engineering - miscellaneous
ESAT - ELECTA, Electrical Energy Computer Architectures
ESAT- TELEMIC, Telecommunications and Microwaves
# (joint) last author

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