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|ITEM METADATA RECORD
|Title: ||High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation|
|Authors: ||Germain, Marianne|
Borghs, Gustaaf #
|Issue Date: ||2004 |
|Conference: ||MRS Fall Meeting Symposium E: GaN, AlN, InN, and Their Alloys location:Leuven Belgium date:29/11/04|
|Publication status: ||published|
|KU Leuven publication type: ||IMa|
|Appears in Collections:||Physics and Astronomy - miscellaneous|
Electrical Engineering - miscellaneous
ESAT - ELECTA, Electrical Energy Computer Architectures
ESAT- TELEMIC, Telecommunications and Microwaves
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