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|ITEM METADATA RECORD
|Title: ||Lattice defects in high quality as-grown CZ silicon, studied with light scattering and preferential etching techniques|
|Authors: ||Vanhellemont, Jan ×|
Wagner, Patrick #
|Issue Date: ||1995 |
|Host Document: ||pages:1755-1760|
|Conference: ||Proceedings 18th International Conference on Defects in Semiconductors - ICDS-18; July 23 -28, 1995; Sendai, Japan. location:Leuven Belgium|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Electrical Engineering - miscellaneous|
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author|
# (joint) last author|
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