Title: Low Vt Ni-FUSI CMOS technology using a DyO cap layer with either single or dual Ni-phases
Authors: Yu, HongYu ×
Chang, Shou-Zen
Veloso, Anabela
Lauwers, Anne
Adelmann, Christoph
Onsia, Bart
Van Elshocht, Sven
Singanamalla, Raghunath
Demand, Marc
Vos, Rita
Kauerauf, Thomas
Brus, Stephan
Shi, Xiaoping
Kubicek, Stefan
Vrancken, Christa
Mitsuhashi, Riichirou
Lehnen, Peer
Kittl, Jorge
Niwa, M
Yin, K.M
Hoffmann, Thomas
De Gendt, Stefan
Jurczak, Malgorzata
Absil, Philippe
Biesemans, Serge #
Issue Date: 2007
Publisher: IEEE
Host Document: pages:18-19
Conference: Symposium on VLSI Technology Digest of Technical Papers location:Leuven Belgium date:14/06/06
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Molecular Design and Synthesis
× corresponding author
# (joint) last author

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