Physics and Technology of High-k Gate Dielectrics II, Date: 2003/10/12 - 2003/10/16, Location: FL, Orlando
Publication date:
2004-01-01
Volume:
2003
Pages:
37 -
46
ISSN:
1-56677-405-5
Publisher:
ECS
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS II
Author:
Tsai, W
Maes, JW ; De Witte, H ; Chen, J ; Delabie, Annelies ; Carter, Richard ; Richard, Olivier ; Caymax, Matty ; Conard, Thierry ; Young, Edward ; De Gendt, Stefan
Keywords:
Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Materials Science, Characterization & Testing, Physics, Condensed Matter, Materials Science, Physics
Abstract:
The incorporation of nitrogen and SiN capping layer onto HfO 2 dielectrics by plasma processing enhanced the electrical performance of poly integrated high k gate stacks with reduced gate leakage and improved EOT scalability. A 5 Å CVD SiN layer on HfO 2 was demonstrated to improve significantly poly- HfO 2 device yield (>95% at 1E-4 cm 2 ) with no change of electrical thickness.