Graphene based Van der Waals contacts on MoS< /sub>2< //sub>field effect transistors

Mootheri, Vivek; Arutchelvan, Goutham; Banerjee, Sreetama; Sutar, Surajit; Leonhardt, Alessandra; Boulon, Marie-Emmanuelle; Huyghebaert, Cedric; Houssa, Michel; Asselberghs, Inge; Radu, Iuliana; Heyns, Marc; Lin, Dennis

doi:10.1088/2053-1583/abb959

Graphene based Van der Waals contacts on MoS< /sub>2< //sub>field effect transistors

Author:

Mootheri, Vivek

Arutchelvan, Goutham ; Banerjee, Sreetama ; Sutar, Surajit ; Leonhardt, Alessandra ; Boulon, Marie-Emmanuelle ; Huyghebaert, Cedric ; Houssa, Michel ; Asselberghs, Inge ; Radu, Iuliana ; Heyns, Marc ; Lin, Dennis

Keywords:

Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science, 2D materials, MoS2, graphene, contact resistance, field effect transistor, transferred contacts, Ruthenium-graphene hybrid contacts, FIELD-EFFECT TRANSISTORS, MOS2 TRANSISTORS, LAYER MOS2, RESISTANCE, MOSFET, SOI, 0303 Macromolecular and Materials Chemistry, 0912 Materials Engineering, 1007 Nanotechnology, 4016 Materials engineering, 4018 Nanotechnology, 5104 Condensed matter physics