Title: Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value
Authors: Yu, HongYu ×
Singanamalla, Raghunath
Ragnarsson, Lars-Ake
Chang, Vincent
Cho, Hag-Ju
Mitsuhashi, Riichirou
Adelmann, Christoph
Van Elshocht, Sven
Lehnen, Peer
Chang, Shou-Zen
Yin, K.M
Schram, Tom
Kubicek, Stefan
De Gendt, Stefan
Absil, Philippe
De Meyer, Christina
Biesemans, Serge #
Issue Date: 2007
Series Title: IEEE Electron Device Letters vol:28 issue:7 pages:656-658
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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