An accurate method is proposed for the extraction of the carrier concentration profile (p(p well)) and the depletion width (W-p well) in a p-well region from high-frequency capacitance measurements by accounting for the series resistance and the capacitance of the n(+) region. W-p well was calculated from the capacitance in the p-well region (C-p well), while p(p well) was derived from the slope of the plot 1/C-p well(2) versus reverse bias. The p(p well) extracted was compared with profiles obtained from spreading resistance probe results. The differences between the two techniques are within 15% in the accessible depletion width, which will be discussed in view of the depth resolution anticipated. (C) 2002 American Institute of Physics.