Title: Improved extraction of carrier concentration and depletion width from capacitance-voltage characteristics of silicon N(+)- P-well junction diodes
Authors: Poyai, Amporn ×
Claeys, Corneel
Simoen, Eddy #
Issue Date: 2002
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:80 issue:7 pages:1192-1194
Abstract: An accurate method is proposed for the extraction of the carrier concentration profile (p(p well)) and the depletion width (W-p well) in a p-well region from high-frequency capacitance measurements by accounting for the series resistance and the capacitance of the n(+) region. W-p well was calculated from the capacitance in the p-well region (C-p well), while p(p well) was derived from the slope of the plot 1/C-p well(2) versus reverse bias. The p(p well) extracted was compared with profiles obtained from spreading resistance probe results. The differences between the two techniques are within 15% in the accessible depletion width, which will be discussed in view of the depth resolution anticipated. (C) 2002 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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