|ITEM METADATA RECORD
|Title: ||Simulation of the initial transient of the Si+ and O+ signals from oxygen sputtered silicon by means of independent models on sputtering and secondary ionization|
|Authors: ||Serrano, J. J|
De Witte, H
Blanco, J. M #
|Issue Date: ||2001 |
|Series Title: ||Journal of Applied Physics vol:89 issue:9 pages:5191-5198|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||Electrical Engineering - miscellaneous|
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