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Title: Electron spin resonance analysis of interfacial Si dangling bond type defects in stack of ultrathin SiO2, Al2O3, and ZrO2 layers on (100)Si
Authors: Stesmans, Andre
Afanas'ev, Valeri
Houssa, Michel #
Issue Date: 2001
Conference: Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France. location:- date:-
Publication status: published
KU Leuven publication type: IMa
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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